CrossBar announced that its RRAM memory technology is inherently resistant to physical hacking targeting sensitive information and data stored in memory. This could lead to new applications where resistance to reverse engineering and physical attacks are essential requirements of the system.
CrossBar says that its partners are now starting to use its RRAM memory technology for few-time programmable (FTP) and one-time-programmable (OTP) NVM applications. This is in addition to CrossBar's "traditional" MTP non-volatile memory and PUF security applications.
CrossBar says that this new applications demand can be met with its current technology, but the company also offers to optimize its RRAM for FTP and OTP applications, which will significantly increase memory density and reduce the cost.
RRAM developer CrossBar announced (in July 2021) a new application of its RRAM technology for use as a physical unclonable function (PUF) in order to generate cryptographic keys in secure computing applications.
CrossBar's RRAM has been historically utilized as non-volatile semiconductor memory, but it is now being introduced for use in hardware security. The company says its solution can enable a more secure and cost-effective class of devices and systems.
The project NEUROTEC (â€œNeuro-inspired artificial intelligence technologies for the electronics of the futureâ€) was launched in November 2019 to develop innovative "Beyond von Neumann" concepts for highly energy-efficient devices. The two-year project shows the great potential of a future neuromorphic computer.
The project aims to fuse two major technologies - machine learning and artificial neural networks (ANNs) and memristive materials and devices - especially redox-based RRAM and phase change memories (PCM). The project's mandate is to develop a full-range of basic technologies ranging from dedicated material deposition technologies, integration technologies, measurement technologies, the development of simulation and modelling tools, up to the design and realization of novel AI circuits.
Strategic Elements announces has signed an agreement with the University of New South Wales (UNSW) to further optimize the company's Nanocube Memory Ink flexible/transparent RRAM technology. UNSW and SER will also develop demonstrator applications for the new technology.
UNSW will begin the research by assessing potential demonstrator applications in areas such as multi-functional capacitive sensors that can detect the type and strength of external stimuli including curvature, pressure, strain, and touch with clear distinction. It will also look into developing memory arrays that will fulfill the growing requirement for local digital data storage on flexible sensors, tags, wearables and high value consumer packaging.
Israel-based Weebit Nano was established in 2014 with an aim to commercialize Rice University's SiOx RRAM technology. Weebit is progressing towards it stated goal of producing a 40nm RRAM Silicon Oxide working cell by the end of 2017.
Coby Hanoch was recently appointed as the company's new CEO, and was kind enough to answer a few questions we had. Coby was VP Worldwide sales at Verisity where he was part of the founding team and grew the company to over $100M sales per year. He was also VP Worldwide sales at Jasper. Mr Hanoch holds a Bachelor of Science in Systems Design from Technion â Israel Institute of Technology.
Q: Coby, you recently joined Weebit as a CEO. What made you excited about Weebit's technology and business?
I believe Weebitâs technology has great potential, especially considering the fact that it is based on standard materials and tools, so once we finish the development we should be able to move more easily into production than other emerging memory technologies I have come across. In addition, and probably more important than the technology, a key driver to the success of a company is the team, and I was very impressed by Weebitâs team and the atmosphere in the company.
In March 2016 Crossbar announced its strategic partnership with Semiconductor Manufacturing International Corporation (SMIC) to co-develop and produce RRAM technologies.
Western Digital announced that its 3D RRAM development is "finished" (this developed started by SanDisk, which is now owned by WD). WD's current plan is to release memory products based on 3D RRAM in 12-24 months - in the same fab that produces flash (NAND) memory.
In October 2015 SanDisk announced a partnership with HP to co-develop RRAM technologies, enhance SanDisk's RRAM tech with