Technical / research

Perovskites enable novel light-emitting RRAM device

Researchers from Kyushu University and the National Taiwan Normal University developed a new RRAM device, readable through both electrical and optical methods. The device is based on perovskite quantum dots that enable to simultaneously store and visually transmit data.

All-inorganic perovskite quantum dot light-emitting memories image

Read the full story Posted: Aug 26,2021

The NEUROTEC project progresses, develops RRAM-based neuromorphic computer structures

The project NEUROTEC (“Neuro-inspired artificial intelligence technologies for the electronics of the future”) was launched in November 2019 to develop innovative "Beyond von Neumann" concepts for highly energy-efficient devices. The two-year project shows the great potential of a future neuromorphic computer.

Project NEUROTEC workpackages image

The project aims to fuse two major technologies - machine learning and artificial neural networks (ANNs) and memristive materials and devices - especially redox-based RRAM and phase change memories (PCM). The project's mandate is to develop a full-range of basic technologies ranging from dedicated material deposition technologies, integration technologies, measurement technologies, the development of simulation and modelling tools, up to the design and realization of novel AI circuits.

Read the full story Posted: Jul 25,2021

New halid perovskite shows promise as an RRAN switching material

Researchers from Korea's Pohang University of Science & Technology (POSTECH) has designed a halide perovskite material for RRAM memory devices. The perovskite material offers low-operating voltage and high-performance resistive switching memory.

The researcher say they have succeeded in designing an optimal halide perovskite material (CsPb2Br5) that can be applied to a ReRAM device by applying first-principles calculation based on quantum mechanics.

Read the full story Posted: Jul 20,2020

Weebit announced a collaboration project with the Technion Institue in Israel

Israel-based SiOx RRAM developer Weebit Nano has signed an agreement to collaborate with the Technion Institute in Israel. Weebit will work together with a team of researchers to examine the possible use of ReRAM devices in processing-in-memory that could speed up processing, memory transfer rate and memory bandwidth and decrease processing latency – while using less power.

Read the full story Posted: Feb 13,2019

Weeebit Nano to collaboare with the Politecnico di Milano on a Neuromorphic AI project

Israel-based SiOx RRAM developer Weebit Nano launched a joint Neuromorphic ReRAM project with
Politecnico di Milano (Polimi). Weebit Nano's team will collaborate with researchers from the Poltecnico to test, characterize and implement its developed algorithms using Weebit’s ReRAM chip. The goal of the project is to demonstrate the capability of ReRAM-based hardware in neuromorphic and artificial intelligence applications.

Read the full story Posted: Jan 20,2019

Strategic Elements and USNW to optimize RRAM technology and develop demonstrator applications

Strategic Elements announces has signed an agreement with the University of New South Wales (UNSW) to further optimize the company's Nanocube Memory Ink flexible/transparent RRAM technology. UNSW and SER will also develop demonstrator applications for the new technology.
Strategic Elements glass-based transparent RRAMprototype

UNSW will begin the research by assessing potential demonstrator applications in areas such as multi-functional capacitive sensors that can detect the type and strength of external stimuli including curvature, pressure, strain, and touch with clear distinction. It will also look into developing memory arrays that will fulfill the growing requirement for local digital data storage on flexible sensors, tags, wearables and high value consumer packaging.

Read the full story Posted: Nov 28,2018

Weebit announced working 40nm SiOx RRAM cell samples

Earlier this year, Weebit Nano announced that it aims to produce 40nm working SiOx RRAM cell samples by the end of 2017, and the company today announced that it achieved that milestone - one month ahead of schedule.

Weebit further reports that measurements performed on the 40nm memory cells on various wafers verified the ability of Weebit Nano SiOx ReRAM cells to maintain its memory behaviour in accordance with previous experiments performed on 300nm cells.

Read the full story Posted: Nov 28,2017