Weebit Nano - Page 3

Israel-based SiOx RRAM developer Weebit Nano announced that it has signed a letter-of-intent with China-based SiEn QingDao Integrated Circuits to jointly investigate ways in which Weebit’s
technology can be used in SiEn’s products.

SiEn is a Communal Integrated Device Manufacturer (CIDM) company, which aggregates companies with similar target markets, technologies, production lines and customers to share common manufacturing technology production goals. Weebit hopes that its RRAM technology will
enhance SiEn’s competitive position by adding significant non-volatile memory capability to its future products.

Israel-based RRAM developer Weebit Nano Announced that it is launching a new program to address the needs of the discrete memory market

Weebit says it is accelerating its entry into the discrete, stand-alone, memory chip market. Weebit says that a key element required for discrete memory chips is the selector, which helps isolate the memory cells so that only the specific cells which should be modified actually are, and all the other cells are disconnected and not impacted.

In August 2019 Israel-based SiOx RRAM developer Weebit Nano announced that it has signed a letter of intent with XTX Technology to investigating ways in which XTX can use Weebit’s technology in its products. Today Weebit announced that XTX verified the technical parameters of Weebit's ReRAM technology and reproduced the results previously achieved with Leti.

Weebit says that this successful external testing with XTX was achieved four months ahead of schedule. The two companies are now investigating ways to integrate Weebit's ReRAM memroy technology into XTX Products.

Israel-based RRAM developer Weebit Nano Announced that it secured $3.1 million in a combined placement and entitlement offer. The company has also announced that it is progressing in its project to develop a customized ReRAM memory module for its South Korean customer - and aims to to deliver the module in mid-2020.

Weebit says that it aims to transfer its facilities to production capacity by the end of 2020.

Israel-based SiOx RRAM developer Weebit Nano announced that it has signed a letter of intent with China-based memory solution provider XTX Technology to investigating ways in which XTX can use Weebit’s technology in its products.

XTX supplies flash memory based solutions to about 2,00 customers, including leading global semiconductor companies. XTX believes that Weebit’s SiOx ReRAM technology has the potential to be a strong fit for the company's needs.

Israel-based RRAM developer Weebit Nano announced that it is in "advanced discussions" with a Tier-2 company to adapt Weebit's technology to meet the customer's unique memory module requirements.

Weebit Nano also announced that it has signed an agreement with Kitec Design that will be Weebit's representative in South Korea, Weebit's most important market (as Korea produces 57% of the global memory chip supply). Weebit is already engaging with several potential customers in Korea, including the Tier-2 company.

Israel-based RRAM developer Weebit Nano announced that its partner Leti has perform retention and endurance tests on its SiOx RRAM technology - and found it to be "at the forefront of the market".
Weebit says that its RRAM demonstrated retention of over 10 years at 130-150 degrees (these high temperatures could enable its RRAM to target the demanding automotive market). Leti also found that a single SiOx RRAM cell endured a million cycles

Israel-based SiOx RRAM developer Weebit Nano has signed an agreement to collaborate with the Technion Institute in Israel. Weebit will work together with a team of researchers to examine the possible use of ReRAM devices in processing-in-memory that could speed up processing, memory transfer rate and memory bandwidth and decrease processing latency – while using less power.

Weebit and the Technion will also perform characterisation and implementation of logic operations using Weebit’s RRAM test chips, demonstrating basic logic operations on a RRAM array

Israel-based SiOx RRAM developer Weebit Nano launched a joint Neuromorphic ReRAM project with
Politecnico di Milano (Polimi). Weebit Nano's team will collaborate with researchers from the Poltecnico to test, characterize and implement its developed algorithms using Weebit’s ReRAM chip. The goal of the project is to demonstrate the capability of ReRAM-based hardware in neuromorphic and artificial intelligence applications.

This is the second Neuromorphic RRAM project that Weebit launches - only recently in November 2018 it announced that it will partner in a similar project with the Non-Volatile Memory Research Group of the Indian Institute of Technology Delhi (IITD).

Weebit Nano reported successful endurance results of its ReRAM cells as a key step towards moving to 300mm wafers at 28nm. Weebit says that its ReRAM cells demonstrated stable voltage levels and endurance, at levels competitive to production non-volatile memories.

Weebit, together with its partner Leti, performed the tests which demonstrated Array-level endurance above 100,000 cycles. The company says that final characterisation will continue over coming weeks on array performance and extended endurance and retention in preparation for the migration to 300mm wafers at 28nm.