Weebit Nano - Page 4

Israel-based SiOx RRAM developer Weebit Nano announced a new development program partnership with chip-design software developer Silvaco to develop a Technology Computer-Aided Design (TCAD) solution to accurately model the electrical behavior of Weebit Nano’s ReRAM devices.

Weebit says that this new collaboration will accelerate the incorporation of Weebit Nano’s ReRAM modules into advanced semiconductor designs. Silvaco will use the developed model as the basis for creating a TCAD solution for joint customers employing ReRAM technology.

Israel-based RRAM developer Weebit Nano announced that its partnership with Leti continues, and Leti and Weebit extended the partnership to include adapting Weebit's RRAM production process to 300 mm wafers, at 28 nm.
Up until now Leti and Weebit's development was done on 200 mm wafers using 40 nm technology. Weebit believes that the move to 300 mm and 28 nm will be quick - and it will be done by the end of Q4 2019. The move to 28 nm will improve Weebit's RRAM cells and enable them to fit even the smallest geometries being used in the market today.

Israel-based SiOx RRAM developer Weebit Nano announced that it will partner with the Non-Volatile Memory Research Group of the Indian Institute of Technology Delhi (IITD) to work jointly on a Neuromorphic RRAM project.
The NVMRG group will research the use of Weebit Nano’s SiOx RRAM technology for certain types of neuromorphic applications, which are used for artificial intelligence. RRAM devices are very promising candidates for enabling high-density and ultimately scaled synaptic arrays in neuromorphic architectures as they are significantly smaller and more energy efficient than current AI data centers, and mimic the brain’s biological computation at the neuron and synaptic level.

Israel-based SiOx RRAM developer Weebit Nano has raised $3 million AUD ($2.16 million USD) via a share placement and the company also plans to raise a further $1 million soon. Weebit's board of directors invested $150,000 as part of this placement.

Weebit recently announced that it has packaged its first memory devices into chips, which can now be shipped to its partners. The first RRAM memory will be delivered to universities to research the use of ReRAM technology in neuromorphic computing, and additional chips are planned to be shipped to commercial partners.

Israel-based SiOx RRAM developer Weebit Nano announced that it has packaged its first memory devices into chips, which can now be shipped to its partners. The company says that its first RRAM memory will be delivered to universities to research the use of ReRAM technology in neuromorphic computing.

Additional chips are planned to be shipped to commercial partners once they engage to explore the possibility to work with Weebit Nano’s technology.

Israel-based SiOx RRAM developer Weebit Nano announced that it produced a 1Mb array of its silicon-oxide ReRAM at 40nm. The 1Mb initial tests, conducted in CEA/Leti facilities in Grenoble, France, demonstrated the capability of addressing and programming nearly all of the memory cells.

Last month Weebit and Leti extended their co-development agreement. In November 2017 we posted an interview with Weebit's new CEO, which explains the company's technolgoy and business.

Israel-based SiOx RRAM developer Weebit Nano announced that it has extended its agreement with Leti to further develop and optimize Weebit’s ReRAM memory technology. Weebit says that this extension will allow it to accelerate the optimizing of the manufacturing process required to achieve industry standard capabilities with its Silicon Oxide (SiOx) ReRAM memory technology.

Weebit and Leti aim to demonstrate a 40nm 1Mb memory array by mid-2018. Weebit and Leti also plan to initiate work on 28nm nodes later this year. In November 2017 we posted an interview with Weebit's new CEO, which explains the company's technology and business.

Israel-based SiOx RRAM developer Weebit Nano demonstrated in November 2017 a 40nm working ReRAM memory cell. The company has now announced that it has successfully scaled up the single memory cell into a 4Kb array.

Weebit Nano says that an analysis of the 4Kb wafers showed no degradation due to scaling. The company is now confident in its goal of a working 40nm 1Mb array by mid-2018.

Earlier this year, Weebit Nano announced that it aims to produce 40nm working SiOx RRAM cell samples by the end of 2017, and the company today announced that it achieved that milestone - one month ahead of schedule.

Weebit further reports that measurements performed on the 40nm memory cells on various wafers verified the ability of Weebit Nano SiOx ReRAM cells to maintain its memory behaviour in accordance with previous experiments performed on 300nm cells.

Israel-based SiOx RRAM developer Weebit Nano recently announced success in demonstrating a 4Kbit array in 300nm. Weebit now updates that it has successfully demonstrated the reliability of data retention and endurance in its 300 nm 4Kb memory cells. data retention lifetime extrapolation demonstrated the ability to maintain written data for 10 years at above room temperature. In addition the chips maintained their data after 30 minutes at 260 degrees, exceeding the soldering requirements of 15 minutes at that temperatures.

Weebit says that these results successfully conclude the 300 nm 4Kb characterization. Weebit says that the endurance results are significantly higher than the program/erase cycling of existing Flash technology.