Israel-based SiOx RRAM developer Weebit Nano demonstrated in November 2017 a 40nm working ReRAM memory cell. The company has now announced that it has successfully scaled up the single memory cell into a 4Kb array.
Weebit Nano says that an analysis of the 4Kb wafers showed no degradation due to scaling. The company is now confident in its goal of a working 40nm 1Mb array by mid-2018.
In November 2017 we posted an interview with Weebit's new CEO, which explains the company's technolgoy and business.
Posted: Feb 11,2018 by Ron Mertens