Australia-based RRAM developer 4DS Memory announced a new type of RRAM technology specifically for AI processing, that enables high-bandwidth, high-endurance persistent memory for big data and neural net applications.
4DS says that as its RRAM requires no refresh within its persistence window and can be 'refreshed' within the DRAM operating window, it can uniquely deliver an energy efficient high bandwidth and high endurance memory technology for the AI Age.
4DS details that its RRAM is highly responsive with extremely fast single-shot write time of 4.7 ns, it has high endurance with up to 109 endurance demonstrated, and it is highly scalable. The company expects to demonstrate a 20 nm cell by Q4 2024.
In August 2023, 4DS said it achieved better-than-expected results from latest memory system testing.
In 2020, 4DS announced that it has raised a total of $5.45 million in two financing round. In 2017, 4DS signed signed an agreement with Belgium-based imec to develop a transferable manufacturing process for its technology. In October 2016 4DS also announced the fabrication of a working 40nm RRAM memory cell in collaboration with HGST, a subsidiary of Western Digital.
The 4DS memory cell is constructed using an advanced perovskite material, which has the same crystal structure as the inorganic compound calcium titanium oxide. The cells have no filaments and are so claim to be easier to scale compared to filamentary RRAM.