4DS Memory announced that it has entered into a significant design agreement with Infineon Technologies to develop a custom RRAM memory test chip. 4DS says that this is a crucial step in its technology advancement.
Under the terms of the agreement, Infineon will provide technical expertise and resources to design the custom RRAM memory test chip based on 4DS's requirements. 4DS will pay a total of $45 million USD for the initial 15-month scope of work. 4DS will announce plans to raise new capital to support this agreement.
In August 2023, 4DS said it achieved better-than-expected results from latest memory system testing.
In 2020, 4DS announced that it has raised a total of $5.45 million in two financing round. In 2017, 4DS signed signed an agreement with Belgium-based imec to develop a transferable manufacturing process for its technology. The 4DS memory cell is constructed using an advanced perovskite material, which has the same crystal structure as the inorganic compound calcium titanium oxide. The cells have no filaments and are so claim to be easier to scale compared to filamentary RRAM.
Last year Infineon unveiled a new family of microcontrollers in its PSoC portfolio of Arm Cortex-based high-performance, low-power, secured devices, the PSoC Edge, designed for next generation responsive compute and control applications. The family of devices also come with extended on-chip memories, including non-volatile RRAM, as well as high speed, secured external memory support.