October 2016

Fujitsu Semiconductor launched its first RRAM chip, the 4Mb MB85AS4MT. Fujitsu co-developed this Chip with Panasonic Semiconductor Solutions, and the company says that this is the world's largest density mass-produced RRAM product.

The MB85AS4MT offers an SPI-interface and operates with a wide range of power supply voltage, from 1.65V to 3.6V. It features an extremely small average current in read operations of 0.2mA at a maximum operating frequency of 5MHz. Fujitsu says it is aimed for battery operated wearable devices and medical devices such as hearing aids and IoT devices such as meters and sensors.

Australia-based RRAM developer 4DS Memory announced the successful completion of a placement of $4 million AUD (about $3 million USD). 4DS says that the placement was significantly oversubscribers and the proceedings will be used to fund 4DS' ongoing RRAM development activities.

A few days ago 4DS announced the fabrication of a working 40nm RRAM memory cell in collaboration with HGST, a subsidiary of Western Digital.

Australia-based RRAM developer 4DS Memory announced that it developed a working 40nm RRAM memory cells. This was achieved in collaboration with HGST, a subsidiary of Western Digital.

The 4DS memory cell is constructed using an advanced perovskite material, which has the same crystal structure as the inorganic compound calcium titanium oxide. The cells have no filaments and are so easier to scale compared to filamentary RRAM.