Weebit Nano announced that electrical tests conducted on its SiOx RRAM at the Leti institute in France has been succesful. Leti performed extensive testing on critical memory parameters such as programming and erase voltage.
Weebit further says that it is now able to move forward with its plans to scale down the RRAM technology to 40nm.
Researchers from Soochow University in China in collaboration with researchers form Harvard, Stanford and MIT developed RRAM memory devices using multilayer hexagonal boron nitride (h-BN) as dielectric. The devices show promising performance - while being based on a 2D material, which may pave the way towards extremely thin and efficient memory devices.
2D materials (such as h-BN and others) are interesting to many researchers, and the field is experiencing a boom following the "discovery" of graphene in 2004.
Rambus announced that it signed a broad patent license agreement with western digital. The agreement covers the use of several memory technologies - including memory architectures, high speed interfaces, security technologies and ReRAM.
Rambus did not provide any more details, but the agreement will last until 2021 with an option for an additional 5-year extension.