October 2017

Weebit Nano announced that it has managed to produce a 4Kb array on 300 nm cells, with 100% yield on selected arrays. Weebit says that this result validates its technology and that this demonstration was the final significant step towards the next goal for the company - a 40nm RRAM Silicon Oxide working cell by the end of 2017.

Preliminary speed tests of Weebit's technology showed that write speeds could be 100 to 1000 times faster than traditional 3D Flash technology while using significantly lower energy.

Strategic Elements announced that it has successfully produced a large-scale batch of its Nanocube Memory Ink with around 400 times the volume of previous batches. Previously the researchers were only able to produces batches in the milliliter range, but now a new method was developed to produces batches of Nanocube Ink in the liter scale.

Strategic Elements also updates that it is initiating a new program with the Finnish VTT Technical Research Centre to analyse and optimise the memory ink film thickness and device operation and performance. The company is also negotiating a new agreement with UNSW that will potentially include trial depositions of the Nanocube Ink on the advanced slot die printing equipment recently acquired by UNSW.

Adesto Technologies announced that Teledyne HiRel Electronics will use Adesto's resistive RAM (CBRAM) memory technology for use in its high-performance, high-reliability semiconductor solutions. Teledyne already offers Adesto's CBRAM chips in 32KB, 64KB, 238KB and 512 KB densities. The company says that these chips offer 100K write cycle endurance and data retention of greater than 40 years at 125°C.

Teledyne HiRel Electronics markets its products into civil aerospace, industrial, medical, defense, scientific and space applications, and the company says that the CBRAM memory offers unique advantages to high-reliability applications as it is highly efficient and resistant to the effects of radiation.