January 2019

Israel-based SiOx RRAM developer Weebit Nano launched a joint Neuromorphic ReRAM project with
Politecnico di Milano (Polimi). Weebit Nano's team will collaborate with researchers from the Poltecnico to test, characterize and implement its developed algorithms using Weebit’s ReRAM chip. The goal of the project is to demonstrate the capability of ReRAM-based hardware in neuromorphic and artificial intelligence applications.

This is the second Neuromorphic RRAM project that Weebit launches - only recently in November 2018 it announced that it will partner in a similar project with the Non-Volatile Memory Research Group of the Indian Institute of Technology Delhi (IITD).

Weebit Nano reported successful endurance results of its ReRAM cells as a key step towards moving to 300mm wafers at 28nm. Weebit says that its ReRAM cells demonstrated stable voltage levels and endurance, at levels competitive to production non-volatile memories.

Weebit, together with its partner Leti, performed the tests which demonstrated Array-level endurance above 100,000 cycles. The company says that final characterisation will continue over coming weeks on array performance and extended endurance and retention in preparation for the migration to 300mm wafers at 28nm.

Israel-based SiOx RRAM developer Weebit Nano announced a new development program partnership with chip-design software developer Silvaco to develop a Technology Computer-Aided Design (TCAD) solution to accurately model the electrical behavior of Weebit Nano’s ReRAM devices.

Weebit says that this new collaboration will accelerate the incorporation of Weebit Nano’s ReRAM modules into advanced semiconductor designs. Silvaco will use the developed model as the basis for creating a TCAD solution for joint customers employing ReRAM technology.