Technical / research - Page 4

Researchers developed a new high-performance bilayer self-selective RRAM device by using HfO2 as a memory swtching layer and mixed ionic and electron conductor as selective layer. The researchers say that this device exhibits high nonlinearity and ultra-low half-select leakage.

This new design may be a way to integrate individual selector devices with memory cell separately in a vertical RRAM device. The researchers successfully demonstrated a four layer vertical crossbar array - with high uniformity, ultra-low leakage, sub-nA operation, self-compliance, and excellent read/write disturbance immunity.

Strategic Elements reports that the alternative fabrication method it started investigating a few weeks ago has succeeded in creating a layer of nanocube ink over five times thinner than achieved previously with increased performance.

The surface roughness and uniformity of the nanocube layer was also significantly enhanced. The new method was developed and optimized at the University of New South Wales.

Crossbar announced a strategic partnership with Semiconductor Manufacturing International Corporation (SMIC) - China's largest semiconductor foundry. The two companies agreed to co-develop and produce RRAM technologies.

Crossbar says that as the company enters the licensing phase, it is honored to collaborate with SMIC - which is a major stepping stone towards its RRAM technology commercialization.

Strategic Elements reported that the company is developing an alternative method to build a Nanocube Memory Ink prototype. The new method is being optimized and the company hopes it will lead to significantly enhanced capabilities.

The company hopes to finish the first initial testing phase over the next 3-4 weeks, and then publish the results and demonstrate the new technology to future potential partners.

Researchers from Korea developed ReRAM chips that are flexible and transparent (80%) and with good performance. The researchers refer to the new ReRAM as FT-ReRAM (Flexible Transparent ReRAM).

The researchers managed to achieve these properties by using an IZO electrode on a flexible substrate.

Researchers from the MIT developed a perovskite thin-film material whose electrical properties can be switched between metallic and semiconducting, simply by applying a small voltage. The material then stays in its new configuration until switched back by another voltage.

This type of material could lead to a new memristor design as it can retain information when the power is switched off. This is still an early-stage development, but one that we should keep an eye on.

Weebit Nano announced a "significant breakthrough" in its nano-porous silicon-oxide (SiOx) RRAM memory devices development. Weebit has managed to scale down its device filament (the conductive path that either allows a current to flow or not) to a sub-5nm scale, without any deterioration of performance reliability.

Weebit, based in Israel, is commercializing technology originally developed at Rice University. The company is currently negotiating with "major semiconductor manufacturers" regarding joint venture development. The company expects to show a commercially viable product within 18 months.

Nanocube Memory developer Strategic Elements have fabricated a new prototype memory cell on a silicon substrate that achieved data writing speeds "over 1000 times faster than today state-of-the-art flash memory technology".

The new prototype also needs a lower voltage - 40% less voltage required by flash memory.