4DS Memory announced that it has entered into a significant design agreement with Infineon Technologies to develop a custom RRAM memory test chip. 4DS says that this is a crucial step in its technology advancement.

Under the terms of the agreement, Infineon will provide technical expertise and resources to design the custom RRAM memory test chip based on 4DS's requirements. 4DS will pay a total of $45 million USD for the initial 15-month scope of work. 4DS will announce plans to raise new capital to support this agreement.

RRAM developer Weebit Nano announced that it has raised $50 million AUD (about $32.4 million USD) through a strongly supported underwritten placement to institutional investors.

The company says that funds will be used to expand the company’s commercialization activities, support new customer and partner agreements, and accelerate the development of its cutting-edge RRAM technology.

Qualcomm Technologies has announced two new IOT chipsets, the Qualcomm QCC730M and Qualcomm QCC74xM modules. The company says that these modules are perfectly suited for IoT applications in the smart home, smart appliances and more.

The QCC730M chip is is a dual-band, micro-power Wi-Fi 4 module. Offering a dedicated 60Mhz MCU units, 640kB of SRAM and 1.5Mb  RRAM memory. The QCC730M also integrates hardware crypto accelerator, and secure boot, debug, and storage.

China-based Xianxin Technology, in collaboration with several research institutes in China, have developed the world's first 28 nm image quality adjustment chip that is powered by embedded RRAM memory.

The company says it is now mass producing the new driver IC, which will be supplied to high-end miniLED LCD TV makers. The company says that by adopting RRAM rather than the mainstream external Flash memory, it enables faster read operations, and lower cost production. 

Researchers from the University of Michigan have discovered the role of phase separation in memristor mechanism, thus paving the way to improving RRAM memory. 

Up until now, researchers were not sure why memristors retain their memory for a long time, as current models did not explain this fully. The new researchers explain that in memristors, oxygen ions prefer to be away from the filament and will never diffuse back, even after an indefinite period of time.

China-based wireless IC designer New Radio Tech (NRT) introduced a new Ultra-WideBand (UWB) chip, the URSAMAJOR 82660, that integrates RRAM. We assume that the embedded RRAM technology was provided by Hefei Reliance Memory, but we're not certain.

The company says that integrating the RRAM into their chip is a major achievements, and it allows them to reduce the chip's footprint by 40%, while being highly cost effective compared to conventional chips that are based on external Flash or integrated eFlash solutions.

In October 2023 RRAM developer Weebit Nano announced that it has signed a licensing agreement with DB HiTek, a Korean-based foundry (said to be one of the world's top 10 foundries). The commercial agreement includes technology transfer, qualification and licensing.

Yesterday Weebit announced together with DB HiTek that it has taped-out (released to manufacturing) a demonstration chip integrating Weebit’s embedded RRAM module in DB HiTek’s 130nm Bipolar-CMOS-DMOS (BCD) process. The highly integrated demo chips will be used for testing and qualification ahead of customer production, while demonstrating the performance and robustness of Weebit’s technology.

China-based OLED producer Visionox, together with Sunrise Display Microelectronics and Hefei Reliance Memory, developed the world's firs AMOLED device driver that is powered by RRAM memory. 

All AMOLED drivers on the market use a combination of SRAM memory, OTP (one-time programmable memory) and external Flash memory (for non-volatile memory), mostly to perform the Demura compensation function. The RRAM memory enables lower cost of production, higher efficiency - and smaller area.

Researchers from The University of California, Berkeley, designed a new versatile compact RRAM model that can model different types of RRAM devices such as oxide-RRAM (OxRAM) and conducting-bridge-RRAM (CBRAM). 

The researchers say that their new model unifies the switching mechanisms of these RRAMs into a single framework. The researchers showcase the model’s accuracy in reproducing published experimental device DC and transient characteristics of various RRAM structures. They also demonstrated the model’s efficacy in capturing RRAM variability and conducting 1T1R circuit simulations.

Nuvoton Technology launched the M2L31, a new energy-efficient microcontroller, that features up to 512Kb of high-performance low-power non-volatile RRAM.

The M2L31 is based on an Arm Cortex-M23 core (up to 72Mhz), and is designed to meet the growing demand for sustainable high-performance embedded computing power. Nuvoton explains that a main contributor to the high efficiency of the new chip is its choice of memory, an on-chip RRAM instead of flash memory that draws less power and can be written to without an erase cycle beforehand.