June 2017

Researchers at Moscow's Institute of Physics and Technology (MIPT) developed a method of depositing the functional layers of an RRAM memory cell using high quality ALD coating. The researchers report that ALD enables a controllable growth of oxygen deficient oxides.

The MIPT researchers used production-proven ALD equipment made by Picosun. The researchers now want to see whether the ALD process can be scaled to an industrial-scale production process.

According to reports, Taiwan Semiconductor Manufacturing Company (TSMC) is aiming to start producing embedded RRAM chips in 2019 using a 22 nm process. This will be initial "risk production" to gauge market reception.

TSMC also aims to start embedded MRAM chip production in 2018.

Researchers from Soochow University in China developed a 2D RRAM device structure based on sheets of graphene and hexagonal boron nitride (hBN). The device uses a Graphene/hBN/Graphene structure and it features excellent overall fitting results.

This is still just a theoretical model, but it may prove to be the basis of high performance RRAM devices.